| AVS 61st International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS2+TF-ThM1 Fluorocarbon Assisted Atomic Layer Etching of SiO2 and Selectivity over Si Using Cyclic Ar/C4F8 Plasma Dominik Metzler, University of Maryland, College Park, S.U. Engelmann, R.L. Bruce, E.A. Joseph, IBM T.J. Watson Research Center, V.A. Godyak, University of Michigan, G.S. Oehrlein, University of Maryland, College Park |
| 8:20am | PS2+TF-ThM2 Highly Selective Atomic Layer Etching of Silicon Dioxide Using Fluorocarbons Eric Hudson, V. Vidyarthi, R. Bhowmick, R. Bise, H.J. Shin, G. Delgadino, B. Jariwala, D. Lambert, S. Deshmukh, Lam Research Corporation |
| 8:40am | PS2+TF-ThM3 Electron Beam Plasma Tool for Atomic Precision Etching Leonid Dorf, S. Rauf, M.-F. Wu, Y. Zhang, F. Tavassoli, K. Ramaswamy, K. Collins, Applied Materials Inc. |
| 9:00am | PS2+TF-ThM4 Precise Theoretical Calculation of Neutral Beam Generation Efficiency by Collision of Chlorine Against Graphite Surface Tomohiro Kubota, Tohoku University, Japan, N. Watanabe, S. Ohtsuka, T. Iwasaki, K. Ono, Y. Iriye, Mizuho Information & Research Institute, Japan, S. Samukawa, Tohoku University, Japan |
| 9:20am | PS2+TF-ThM5 Invited Paper Achieving One Tenth of a Nanometer Precision in Etching of SiO2 Over Silicon: Challenges and Opportunities Gottlieb Oehrlein, University of Maryland, College Park |
| 11:00am | PS2+TF-ThM10 Numerical Simulation of Atomic Layer Etch via FPS3D Paul Moroz, Tokyo Electron US Holdings |
| 11:20am | PS2+TF-ThM11 Low Damage Etch Residue Removal of CoFeB Material using CO/NH3 Reactive Ion Beam for STT-MRAM Device MinHwan Jeon, K.C. Yang, D.H. Yun, J.Y. Youn, G. Yeom, Sungkyunkwan University, Republic of Korea |
| 11:40am | PS2+TF-ThM12 Effects of Cryogenic Cooling on Gallium Nitride Film in Argon Plasma Daisuke Ogawa, Y. Nakano, K. Nakamura, Chubu University, Japan |