| AVS 61st International Symposium & Exhibition | |
| Surface Science | Tuesday Sessions |
| Session SS-TuP |
| Session: | Surface Science Poster Session |
| Presenter: | Rupali Nagar, Symbiosis Institute of Technology (SIT), Symbiosis International University (SIU), India |
| Authors: | R. Nagar, Symbiosis Institute of Technology (SIT), Symbiosis International University (SIU), India A. Praveen, Indian Institute of Technology Madras, India S. Ramaprabhu, Indian Institute of Technology Madras, India |
| Correspondent: | Click to Email |
Zinc oxide (ZnO) is a wide bandgap semiconductor with strong room temperature luminescence, high electron mobility and good transparency. These properties make it an attractive transparent conducting oxide rendering it suitable for optical and photovoltaic applications. It is imperative to devise synthesis techniques that are quick, safe, economical, and easy to implement. In this direction, ZnO nanostructures were synthesized by photon irradiation technique by using different sets of precursors and reducing agents. The synthesized nanostructures were characterized by X-ray diffraction, scanning and transmission electron microscopy, and optical properties investigated by UV-Visible and Raman spectroscopy. Various aspects of the synthesis procedure are compared to understand the mechanism of formation of nanostructures, and the effects of pH, irradiation time that impact the morphology and yield of ZnO nanostructures are discussed.