| AVS 61st International Symposium & Exhibition | |
| Scanning Probe Microscopy Focus Topic | Thursday Sessions |
| Session SP+2D+AS+EM+MC+NS+SS-ThM |
| Session: | Probing Electronic and Transport Properties |
| Presenter: | Phillip First, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Graphene grown epitaxially on silicon carbide conforms to nanofacetted step edges, even for step heights of many nanometers. The “sidewall” nanoribbons that result show astounding transport characteristics (~15 um ballistic length at room temperature), as demonstrated by others,1 but the physical basis for these results is still not certain. In our STM measurements of sidewall nanoribbons, we find an extended 1D region with electronic structure much different than 2D graphene. Spectroscopic results on graphene near nanofacet corners indicate a strain gradient and a rapid change in the doping. Such strong gradients may be key to understanding the ballistic transport in this system. P
1J. Baringhaus, M. Ruan, F. Edler, A. Tejeda, M. Sicot, AminaTaleb-Ibrahimi, A.-P. Li, Z. Jiang, E. H. Conrad, C. Berger, C. Tegenkamp and W. A. de Heer, “Exceptional ballistic transport in epitaxial graphene nanoribbons,” Nature, 506, 349 (2014).