| AVS 61st International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Thursday Sessions |
| Session NS-ThP |
| Session: | Nanoscience Division Poster Session |
| Presenter: | Jung-Hyung Kim, Korea Research Institute of Standards and Science, Republic of Korea |
| Authors: | J.H. Kim, Korea Research Institute of Standards and Science, Republic of Korea K.H. You, Korea Advanced Institute of Science and Technology, Republic of Korea S.J. You, Korea Research Institute of Standards and Science (KRISS), Republic of Korea D.J. Seong, Korea Research Institute of Standards and Science (KRISS), Republic of Korea Y.H. Shin, Korea Research Institute of Standards and Science (KRISS), Republic of Korea |
| Correspondent: | Click to Email |
Compounds of Ga, such as gallium oxide(Ga2O3) and gallium nitride(GaN), are of interest due to its various properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as UV- to blue-light-emitting diodes(LEDs) and laser diodes(LDs).1 Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. While bulk-GaN exhibits a band gap of 3.3 eV to 3.5 eV, nanoparticles show a size-depending band gap if the particle size falls below 10.0 nm.2
In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is evaporated by induction heating. Nitrogen radicals for GaN nanoparticle synthesis are supplied from inductively coupled plasma with N2 gas. We use two plasma sources: one is for sufficient N radicals and the other is for in-situ plasma treatments. With this method, the post treatments such as annealing are not needed to get sufficient crystallinity. The synthesized nanoparticles are analyzed using field-emission scanning microscope(FESEM), transmission electron microscope(TEM) and x-ray photoelectron spectroscopy(XPS), and photo-luminescence(PL). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.
References
1. D. Pile, Nat. Photonics 5, 394, 2011
2. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys., 76, 1363, Review. 1994