| AVS 61st International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Wednesday Sessions |
| Session NS+AS-WeA |
| Session: | Nanoscale Imaging and Materials Characterization |
| Presenter: | Ana Stevanovic, National Institute of Standards and Technology (NIST) |
| Authors: | A. Stevanovic, National Institute of Standards and Technology (NIST) A. Kolmakov, National Institute of Standards and Technology (NIST) |
| Correspondent: | Click to Email |
The interplay between the electron transport and chemical status of the surface of working nanodevices can be affected by local electroactive inhomogeneities (defects), presence of near surface depletion regions and Schottky contacts. In spite of tremendous progress achieved in understanding of semiconductor chemical sensors, very little experimental data are available on aforementioned interplay in working devices under realistic operation conditions. Ambient pressure electron microscopy is used in this work to address in situ imaging of a formation of electroactive inhomogeneities inside a model SnO2 nanowire device as a function of gas environment and temperature under realistic operating conditions. In addition, using scanning photoelectron and Auger microscopy with the lateral resolution of ca 80 nm, we are able to access spectroscopically the fine changes in surface condition of an individual SnO2 nanowire during their operation. It is possible to monitor the changes in a conductance of the SnO2 nanodevice in operando mode upon exposures to different redox gases and relate them to the formation of the specific surface groups.