| AVS 61st International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS+AS+SS-TuA |
| Session: | Nanowires and Nanotubes: Advances in Growth and Characterization |
| Presenter: | Amy Walker, University of Texas at Dallas |
| Authors: | A.A. Ellsworth, University of Texas at Dallas J. Yang, University of Texas at Dallas Z. Shi, University of Texas at Dallas A.V. Walker, University of Texas at Dallas |
| Correspondent: | Click to Email |
Nanoscale one-dimensional materials, commonly called nanowires, have properties that differ significantly from their bulk counterpart materials, and thus have applications in areas including sensing, energy conversion, electronics and optoelectronics. One of the major challenges in the practical use of nanowires is their integration into complex functional structures in a predictable and controlled way. We have recently introduced two promising new techniques by which to direct the growth of metallic and semiconducting nanowires. ENDOM, or Electroless Nanowire Deposition On Micropatterned substrates, employs electroless deposition (ELD) to form metallic nanowires on substrates. SENDOM, or Semiconductor Nanowire Deposition on Micropatterned surfaces, uses chemical bath deposition (CBD) to deposit semiconductor nanowires. SENDOM and ENDOM are generally applicable to the preparation of metallic, semiconducting, and even insulating nanostructures on many technologically relevant substrates. These techniques have several advantages over existing in situ synthesis and placement methods: it is fast, and it does not require expensive lithographic equipment or a clean room.
Using ENDOM or SENDOM we are able to create nanowires that are ultralong (centimeters) and follow complex paths such as a right-angle or a curve. We illustrate ENDOM by deposition of Ni, Cu, Pd and other nanowires on patterned –OH/–CH3 SAMs. We exploit the different deposition rates electroless deposition of metals using dimethylamine borane (DMAB) on –CH3 and –OH terminated SAMs to deposit nanowires. We illustrate SENDOM by deposition of CuS nanowires on patterned –COOH/–CH3 SAMs. In this case, the deposition is controlled by the interaction of thiourea (sulfur source) with the SAM surface. In this paper we discuss the reaction pathways involved in the formation of these nanowires including the nucleation sites and the dependence of the nanowire growth on pH and deposition temperature.