AVS 61st International Symposium & Exhibition
    Manufacturing Science and Technology Thursday Sessions
       Session MS-ThP

Paper MS-ThP4
Electrical Contact Resistance Characteristics of 28nm HK/MG Gate-Last Process with Advanced Manufacture Technology

Thursday, November 13, 2014, 6:00 pm, Room Hall D

Session: Manufacturing Science and Technology Poster Session
Presenter: Ching-Pin Hsu, United Microelectronics Corporation, Taiwan, Republic of China
Authors: C.P. Hsu, United Microelectronics Corporation, Taiwan, Republic of China
C.L. Lu, United Microelectronics Corporation, Taiwan, Republic of China
Y.C. Lin, United Microelectronics Corporation, Taiwan, Republic of China
F.Y. Chang, United Microelectronics Corporation, Taiwan, Republic of China
K.Y. Liao, United Microelectronics Corporation, Taiwan, Republic of China
C.L. Chen, United Microelectronics Corporation, Taiwan, Republic of China
L. Chen, Tokyo Electron Taiwan, Republic of China
C. Huang, Tokyo Electron Taiwan, Republic of China
C. Chen, Tokyo Electron Taiwan, Republic of China
J. Tsai, Hermes Epitek, Taiwan, Republic of China
Y. Hsiao, Hermes Epitek, Taiwan, Republic of China
A. Wang, Hermes Epitek, Taiwan, Republic of China
Correspondent: Click to Email
The High-k Metal Gate (HK/MG) Contact Rc is an extremely key factor to dominate the HK/MG MOS transistor device performance. Therefore the HK/MG Contact Rc stability and controllability become relatively important. However, the influence of HK/MG Contact Rc stability would come from the Contact etching process especially. This paper presents HK/MG Contact Rc performance evaluation to achieve the goal of mass production with the control of process flow time, and with several difference treatment methods of Dry and Wet process.