AVS 61st International Symposium & Exhibition
    Manufacturing Science and Technology Thursday Sessions
       Session MS-ThP

Paper MS-ThP2
Reliability Improvement in Metal Hard-mask based Cu/Ultra Low-K Interconnects by Damage Reduction

Thursday, November 13, 2014, 6:00 pm, Room Hall D

Session: Manufacturing Science and Technology Poster Session
Presenter: MingDa Hsieh, United Microelectronics Corporation, Taiwan, Republic of China
Correspondent: Click to Email
Among the several factors of the circuit reliability degradation, Low-k damage is one of the major factors. The purpose of this paper is to improve reliability by reducing the damage during etching. Low-k damage has been quantified by analysis of measured k value, Relief etch, Thermal Desorption Spectroscopy (TDS) and Leakage Current. Based on all the results, we can infer that Low dissociation Ash and low power PET reduces low-k damage and improves VRDB.