AVS 61st International Symposium & Exhibition
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI+MG-TuM

Paper MI+MG-TuM11
Depth Dependent Mapping of Valence and Other Factors in LaSrMnO3/PrZrTiO3 Magnetoelectric Heterostructures

Tuesday, November 11, 2014, 11:20 am, Room 311

Session: Advanced Materials Discovery 
Presenter: Mikel Holcomb, West Virginia University
Authors: M.B. Holcomb, West Virginia University
C.-Y. Huang, West Virginia University
R. Trappen, West Virginia University
J. Zhou, West Virginia University
Y.-H. Chu, National Chiao Tung University, Taiwan, Republic of China
Correspondent: Click to Email
Our group focuses on the ability to study the unique properties occurring at material surfaces and interfaces. One of the most interesting types of interfaces are magnetoelectric, because they offer the ability to electrically control magnetism or vice versa. This magnetoelectric control offers potential advantages in computing, magnetic sensors, energy scavenging and more. Magnetoelectric interfaces offer advantages over single layer magnetoelectrics as the ordering temperatures can be above room temperature and the coupling can be significantly stronger. Despite these advantages, the mechanism responsible for magnetoelectric coupling is currently unknown, which limits our ability to improve these systems to the parameters required for applications. In order to understand the mechanism for magnetoelectric multilayers, we investigated LaSrMnO3 on PbZrTiO3. By varying the sample thickness and utilizing both surface and bulk sensitive synchrotron radiation techniques, we are able to map out the Mn valence throughout the LaSrMnO3 layer. We have also studied how strain and magnetization change with layer thickness. I will discuss our how results enable us to understand the charge origin of magnetoelectric interfaces.