AVS 61st International Symposium & Exhibition
    Materials Characterization in the Semiconductor Industry Focus Topic Monday Sessions
       Session MC+2D+AP+AS-MoA

Paper MC+2D+AP+AS-MoA10
In-line Dimensional Measurement via Simultaneous Small Spot XPS and XRF for Cu CMP Process Control

Monday, November 10, 2014, 5:00 pm, Room 313

Session: Characterization of III-Vs (2:00-3:20 pm)/Photovoltaics, EUV masks, etc. (3:40-4:40 pm)
Presenter: Wei Ti Lee, Revera
Authors: B. Lherron, ST Microelectronics
W.T. Lee, Revera
Motoyama, IBM
Chao, IBM
Deprospo, IBM
Kim, IBM
Correspondent: Click to Email
As Cu lines used for CMOS devices interconnections become thinner and smaller, current metrology solutions reach their limits. XRay Photoelectron Spectroscopy (XPS) and XRay Fluorescence (XRF) are commonly used as Semiconductor manufacturing process control techniques to measure composition and/or film thickness. In this paper we are exploring the use of a combination of XPS and XRF collected simultaneously to measure the dimensions (line top CD, area and thickness) of Cu lines post Cu CMP on patterned structures. A set of structures with different Cu line width and pitch were used to demonstrate the capability of XPS/XRF on this new application. Results obtained showed good correlation with predicted CD measured by XPS and line section measured by XRF .The paper will also present the comparison with cross section as well as the performance in precision, sensitivity and accuracy of the newly developed technique.

This work was performed by the Research and Development Alliance Teams at various IBM Research and Development Facilities