| AVS 61st International Symposium & Exhibition | |
| Energy Frontiers Focus Topic | Tuesday Sessions |
| Session EN-TuP |
| Session: | Energy Frontiers Poster Session |
| Presenter: | Francisco Aguirre-Tostado, CIMAV-Monterrey, Mexico |
| Authors: | F.S. Aguirre-Tostado, CIMAV-Monterrey, Mexico R. Garza-Hernandez, CIMAV-Monterrey, Mexico R. Mayen-Mondragon, UNAM-Punta, Mexico E. Martinez-Guerra, CIMAV-Monterrey, Mexico |
| Correspondent: | Click to Email |
The use of solution-based methods for semiconducting thin film deposition is of great importance for large area photovoltaics applications, enabling as well the deposition on flexible substrates. Chalcogenide semiconductor materials present p- and n-type characteristics that are attractive for photovoltaics applications. The optimization of device structure for a solar cell requires an atomistic understanding of the structure and chemical reactions taking place during deposition and post-deposition processes. In this regard, X-ray photoelectron spectroscopy (XPS) is uniquely suited for tracking chemical reactions occurring at the surface and interface of sub-nanometric layers. The chemical analysis and thermal stability for surface and interface reactions of binary and ternary chalcogenide semiconductors is presented. CuS, ZnS, SnS2, CdS thin films and some of its combinations were deposited by the successive ionic layer absorption and reaction method (SILAR) under controlled environment next to the XPS analysis load-lock chamber. Step by step XPS analysis of the SILAR process reveals an incubation period that depends on temperature and ion concentrations. The stability of the heterostructures is discussed in terms of chemical reactivity and inter-diffusion.