AVS 61st International Symposium & Exhibition
    Electronic Materials and Processing Wednesday Sessions
       Session EM1-WeM

Invited Paper EM1-WeM12
High-Field and Thermal Transport in 2D Atomic Layer Devices

Wednesday, November 12, 2014, 11:40 am, Room 311

Session: Materials and Devices for High Power Electronics (8:20-11:00 am)/Two Dimensional Electronic Materials & Devices (11:00 am - 12:20 pm)
Presenter: Eric Pop, Stanford University
Authors: E. Pop, Stanford University
C.D. English, Stanford University
V.E. Dorgan, University of Illinois at Urbana-Champaign
A. Behnam, University of Illinois at Urbana-Champaign
Z. Li, Stanford University, University of Illinois, Urbana-Champaign
S. Islam, University of Illinois at Urbana-Champaign
Correspondent: Click to Email
Two-dimensional (2D) materials like graphene and transition metal dichalcogenides (TMDs) are uniquely suited for nanoscale field-effect transistors (FET) due to sub-nm channel thickness and lack of dangling surface bonds. Thus, unlike three-dimensional (3D) materials such as Si, FETs based on 2D materials would be more resilient to short-channel effects and would suffer less mobility degradation from carrier-surface scattering. Nevertheless, most existing studies of 2D materials have focused on large devices and low-field transport. By contrast, highly scaled 2D-FETs will require very good understanding of electric transport at high fields and thermal transport as relevant for large scale device integration.

In this talk we will describe our recent progress in optimizing transport at 2D-3D material contacts, examining high-field transport, FET scaling and thermal measurements at sub-100 nm device dimensions. For instance, we have recently uncovered transport physics at TMD and 2D graphene contacts with metal electrodes, including the roles of metal deposition conditions during fabrication and that of thermoelectric (Peltier) effects during transistor operation [1,2]. We will also describe our understanding of high-field transport in MoS2 and graphene, including the importance of self-heating effects on various substrates such as SiO2, BN and HfO2 [3,4]. Finally, we will describe our thermal measurements in suspended graphene [5] and in graphene devices with dimensions comparable to the electron and phonon mean free paths (~100 nm) [6]; the former yield the intrinsic behavior of this material, while the latter show quasi-ballistic thermal transport near room temperature, as well as significant phonon-edge scattering in narrow devices. The results are of importance for both electronic and thermal applications of 2D materials.

References

[1] K.L. Grosse, M.-H. Bae, F. Lian, E. Pop, W.P. King, Nature Nano. 6, 287 (2011)

[2] C.D. English, V.E. Dorgan, G. Shine, K. Saraswat, E. Pop, IEEE Device Research Conf. (2014)

[3] M.-H. Bae, S. Islam, V.E. Dorgan, E. Pop, ACS Nano 5, 7936 (2011)

[4] S. Islam, Z. Li, V.E. Dorgan, M.-H. Bae, E. Pop, IEEE Electron Device Lett. 34, 166 (2013)

[5] V.E. Dorgan, A. Behnam, H. Conley, K. Bolotin, E. Pop, Nano Lett., 13, 4581 (2013).

[6] M.-H. Bae, Z. Li, Z. Aksamija, P.N. Martin, F. Xiong, Z.-Y. Ong, I. Knezevic, E. Pop, Nature Comm. 4, 1734 (2013)