| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM1-WeM |
| Session: | Materials and Devices for High Power Electronics (8:20-11:00 am)/Two Dimensional Electronic Materials & Devices (11:00 am - 12:20 pm) |
| Presenter: | Jeong-Sun Moon, HRL Laboratories, LLC |
| Authors: | J.-S. Moon, HRL Laboratories, LLC H.-C. Seo, HRL Laboratories, LLC K.A. Son, HRL Laboratories, LLC B. Yang, HRL Laboratories, LLC M. Antcliffe, HRL Laboratories, LLC A. Schmitz, HRL Laboratories, LLC D. Le, HRL Laboratories, LLC L.O. Nyakiti, Naval Research Laboratory V.D. Wheeler, Naval Research Laboratory R.L. Myers-Ward, Naval Research Laboratory C.R. Eddy, Naval Research Laboratory D.K. Gaskill, Naval Research Laboratory K.-M. Lee, University of California at San Diego P. Asbeck, University of California at San Diego |
| Correspondent: | Click to Email |
Graphene is a truly 2D electronic material with a very high intrinsic saturation velocity (Vsat) of ~5x107 cm/sec, which has great potential for high-speed RF applications. In addition, graphene offers unique properties, such as high mobility, excellent scalability, symmetry in electron or hole channel, its ability to be integrated into any substrate, and its potential compatibility with CMOS.
The material quality and fabrication process for graphene have improved with sheet resistance of ~200 ohm/sq, ohmic contact resistance of ~0.03 W×mm, the lowest on-state resistance of 0.13 W×mm, and the highest saturated source-drain current of ~3 A/mm at Vds = 1 V. Recently, graphene FETs (GFETs) demonstrated zero-bias resistive FET mixer operation up to 20 GHz [1] with 10 times improvement in the mixer quality factor (IIP3/total power) over state-of-the-art (SOA) resistive FET mixers; these GFETs also demonstrated zero-bias in power detectors and radiometers (up to 220 GHz) [2] with linear-in-dB dynamic range with >20 dB improvement over SOA FETs. Graphene heterostructure-based FETs have been developed as enhancement-mode FETs with an Ion/Ioff ratio of >105 and excellent pinch-off and I-V saturation [3]. Graphene varactors have been demonstrated on glass substrates, expanding graphene’s potential to be integrated with arbitrary substrates, and potentially enabling active and tunable antenna surfaces beyond wafer-scale.
In this talk, we present recent progress in graphene material, GFETs, graphene heterostructure FETs, circuit applications for mixers, radiometers, detectors, varactors, and progress toward integrating graphene with active antennas. Continuous development of this emerging material would potentially enable RF systems on nonconventional surfaces.
This material is partially based upon work supported by the Government under Contract No. N66001-08-C-2048. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the Contracting Agency.
[1] J.S. Moon et al., IEEE Electron Device Letters., vol 34, p465, 2013; J. S. Moon and D. Kurt Gaskill, IEEE Trans. Microwave Theory and Tech., vol. 52, pp 1014-1024, 2011.
[2] J. S. Moon et al., IEEE Electron Device Letters., vol 33, p1357, 2012.
[3] J.S. Moon et al., IEEE Electron Device Letters., vol 34, p1190, 2013