Invited Paper EM1-WeM1
Commercialization of High Voltage GaN HEMT.

Wednesday, November 12, 2014, 8:00 am, Room 311

With its proven ability to reduce size (improved form factor) and save energy (improved efficiency) Gallium Nitride (GaN) is now no longer a nice to have, it is a must have for power conversion. In applications have emerged ranging from sub 100 watt ultra-compact high frequency adapters to multi kilowatt highly efficient PV Inverters, GaN makes it possible to do what Silicon cannot. High voltage GaN on Silicon HEMT switches are now a reality, following successful completion of JEDEC qualification as well as establishment of a high voltage lifetime of 100M hours. A large area (6inch) Silicon substrate, epitaxial processes that promise to leverage the commercial success of the well established GaN LED & lighting products and the ability to manufacture in existing high volume Silicon foundries makes GaN commercially attractive. Successful companies need to deliver high quality product with a deep understanding of how the GaN switch is best utilized in applications. We will discuss the commercialization of the GaN power HEMT by Transphorm - enabled by execution on the above fronts, a strong intellectual property across the full value chain and a strong team with deep rooted experience in GaN technology and business. Ultimately GaN is expected to significantly reduce conversion losses endemic in all areas of electricity conversion, ranging from power supplies to PV inverters to motion control to electric vehicles, enabling consumers, utilities and Governments to contribute towards a more energy efficient world.