| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeA |
| Session: | High-K Dielectrics for 2D Semiconductor |
| Presenter: | Moon Kim, The University of Texas at Dallas |
| Authors: | M. Kim, The University of Texas at Dallas N. Lu, The University of Texas at Dallas J. Oviedo, The University of Texas at Dallas X. Peng, The University of Texas at Dallas J. Wang, The University of Texas at Dallas G. Lian, The University of Texas at Dallas A. Azcatl, The University of Texas at Dallas S. McDonnell, The University of Texas at Dallas R.M. Wallace, The University of Texas at Dallas S. Vishwanath, University of Notre Dame H. Xing, University of Notre Dame |
| Correspondent: | Click to Email |
Over the past two years, transition metal dichalcogenide (TMD) materials, as 2-D crystals, have attracted much interest for a wide range of electronic and optoelectronic device applications. Yet, uniform deposition of sub-10 nm dielectrics on 2-D materials remains challenging.There is a great demand for the visualization and analysis of interfaces and defects in 2-D crystals and gate oxides, which play an important role in the growth and properties of heterostructures. Site-specific cross-sectional TEM imaging and associated techniques have become essential in providing detailed atomic scale information. High angle angular dark field (HAADF)-scanning transmission electron microscopy (STEM) can be used to investigate the atomic structure and chemistry of TMD-oxide interfaces and defects. In-situ TEM techniques such as heating and electrical/mechanical probing can also provide information regarding the dynamic behavior of the materials/devices of interest.
Herein, we report our results on HfO2 and Al2O3 thin films deposited on MoS2 by atomic layer deposition and SnSe2 FETs with an Al2O3 gate oxide. Our in-situ TEM work on 2-D materials will also be presented. Based on our study, a possible growth mechanism of oxides on TMD with different surface treatments has been proposed [1,2]. These unique and effective site-specific and in-situ analysis tools can be widely applied to other gate oxides of interest.
This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of six centers supported by the STARnet phase of the Focus Center Research Program (FCRP), a Semiconductor Research Corporation program sponsored by MARCO and DARPA.
[1] ACS Nano, 7, 10354–10361, 2013.
[2] Applied Physics Letters, 104, 111601, 2014.