| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeA |
| Session: | High-K Dielectrics for 2D Semiconductor |
| Presenter: | Massimo Fischetti, The University of Texas at Dallas |
| Authors: | M.V. Fischetti, The University of Texas at Dallas W.G. Vandenberghe, The University of Texas at Dallas |
| Correspondent: | Click to Email |
Basic ideas from pseudopotentials and semiclassical-transport will be used to discuss the properties of some novel 2D materials considered for post-Si-CMOS applications. First, it will be shown that in order to scale devices to 5 nm, simple electrostatic scaling laws demand the use of these two-dimensional materials, despite the daunting processing challenges they pose. Graphene will be considered discussing how its outstanding electronic properties become much less interesting when used as a component of some non-ideal structure, such when supported and gated and/or in nanoribbon form. A couple of very interesting ideas will be discussed next: 1. The Bose-Einstein condensation in bilayer systems (motivating UT-Austin’s BiSFETs) as an example of how issues of practical implementation may regrettably transform an excellent idea into a pure academic exercise; and 2. Monolayer tin (“stannanane”) as a 2D topological insulator with potential applications in spintronics and low-power high-performance devices. Besides discussing its potential electronic properties, the likelihood of actually fabricating such a material will be discussed on the basis of ab initio thermodynamics.