With CMOS nearing the physical limits of scaling, the future of the semiconductor industry is at a critical point. The International Technology Roadmap for Semiconductors identifies the growing need to interface new nanoscale materials and devices with Si CMOS architectures to sustain nanoelectronic circuit scaling (more-of-Moore) and to discover entirely new electronic systems (more-than-Moore). This talk will describe new directed self-assembly process to position large, diverse, and interchangeable arrays of nanowire sensors or sheets of alternative electronic materials onto fully-processed Si CMOS circuits. The wires or sheets are fabricated off-chip from many different materials tailored for a specific function. Electric-field forces are then used direct different populations of these materials to specific regions of the chip, while also providing accurate registry to a predefined feature on the chip. Following assembly, conventional lithographic processes can then be used to define the nanodevices and connect them to the Si circuit. Several material and device integration examples will be discussed, including the directed assembly of metal-oxide nanowire device arrays as well as monolayer 2D transition metal dichalcogenide crystal materials.