| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | Rasanga Samaraweera, Georgia State University |
| Authors: | R.L. Samaraweera, Georgia State University D. Seidlitz, Georgia State University B. Hussain, University of North Carolina at Charlotte M.K.I. Senevirathna, Georgia State University I.T. Ferguson, University of North Carolina at Charlotte N. Dietz, Georgia State University |
| Correspondent: | Click to Email |
This contribution will present results on the influence of remote plasma activated nitrogen containing precursor species on the physical properties of GaN and ternary GaInN layers grown by plasma-assisted metal organic chemical vapor deposition (PA-MOCVD). A hollow cathode rf-plasma source (13.65 MHz, 50-500 W) was used to generate reactive nitrogen plasma species in which hydrogen (H2) and ammonia (NH3) are added downstreams to tailor the reactive nitrogen species (N*/NH* etc.) interacting at the growth sites.
Growth parameters such as: H2, N2, NH3 flows, metalorganic (MO) flows, plasma power, reactor pressure, and/or substrate temperature have been varied to assess their influence on the physical layer properties. The plasma species and its compositions have been analyzed using plasma emission spectra and absorption spectra. The structural and optoelectronic properties of the epilayers have been studied by x-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared reflectance (FTIR) and Photo-luminescence (PL) spectroscopy. The optical analysis of the GaN layers by Infrared (IR) reflectance reveals the optical dielectric function around ε∞= 5.35, which is comparable with the reported bulk values. The growth rates vary up to 200 nm/hour for GaN.