| AVS 61st International Symposium & Exhibition | |
| Spectroscopic Ellipsometry Focus Topic | Thursday Sessions |
| Session EL-ThP |
| Session: | Spectroscopic Ellipsometry Poster Session |
| Presenter: | Neville Sun, Angstrom Sun Technologies Inc. |
| Authors: | N. Sun, Angstrom Sun Technologies Inc. R. Sun, Angstrom Sun Technologies Inc. N.J. Alexander, SUNY College of Nanoscale Science and Engineering H. Efstathiadis, SUNY College of Nanoscale Science and Engineering |
| Correspondent: | Click to Email |
Indium doped Zinc Oxide as a transparent conductor oxide replacement for thin film solar cells applications
Neville Suna and Richard Suna
aAngstrom Sun Technologies Inc., 31 Nagog Park, Acton, MA 01720
J. Nicholas Alexanderb and Harry Efstathiadisb
bSUNY – College of Nanoscale Science and Engineering, 257 Fuller Road, Albany, NY 12203
Transparent conductors (TCs) are currently used in many applications, such as solar cells, displays, and electrochromic windows. TCs transparency is reduced in the infrared region due to their metallic property. Indium doped zinc oxide (InZnO) has been considered to be a substitute for the traditional indium tin oxide (ITO) to reduce indium consumption. In this work InZnO was deposited from a metallic indium target and a ceramic zinc oxide target via magnetron co-sputtering in a confocal configuration deposition tool. The films were deposited on soda-lime glass and silicon substrates and had their physical and optical properties measured. The mobility and carrier concentration was characterized by hall measurements, optical properties characterized through ultraviolet-visible-Near Infrared spectroscopy (UV-VIS-NIR), composition characterized by x-ray photoelectron spectroscopy (XPS) and band-gap characterized by spectroscopic ellipsometry.