Paper AS+MC+SS-FrM9
Towards Spin-FETs: Growth and Characterization of Magnetoelectric Chromium Oxide Films on Graphene
Friday, November 14, 2014, 11:00 am, Room 316
| Session: |
Practical Surface Analysis II |
| Presenter: |
Sean Stuart, North Carolina State University |
| Authors: |
S.C. Stuart, North Carolina State University
E. Sachet, North Carolina State University
J.-P. Maria, North Carolina State University
J.E. Rowe, North Carolina State University
D.B. Dougherty, North Carolina State University
M. Ulrich, Army Research Office
|
| Correspondent: |
Click to Email |
Graphene has brought spintronic devices that depend on the ability to transport spin much
closer to realization. Graphene's high carrier mobility and low spin-orbit scattering allow for efficient
spin transport, which has been demonstrated by several publications over useful length scales [1,2].
Further progress toward more sophisticated spintronic devices requires controllable manipulation of
spin polarized charge carriers. A graphene Spin-Field Effect Transistor has been proposed by
Semenov et al [3] that manipulates the spin of charge carriers in a graphene channel by an exchange
interaction with a hypothetical ferromagnetic dielectric. As an alternative that also adds functionality,
we have identified Cr2O3 as a material whose magnetoelectric properties would enable voltage
controlled switching of the exchange interaction. The Magnetoelectric properties of Cr2O3 have been
extensively studied [4], including recent reports of a robust electrically switched magnetic surface
state [5,6].
We used pulsed laser deposition to grow thin Cr2O3 films directly on HOPG. AFM shows a
smooth Cr2O3 film with the hopg topography preserved. X-Ray Diffraction shows that the film has a
(0001) texture for films grown at 300 - 650ºC, which is the strongest orientation of the
magnetoelectric effect. The magnetic polarization of the film can be aligned by magnetoelectric
annealing and locally switched with conducting AFM, the effects of both are observed by magnetic
force microscopy.
[1]. Han, et. Al. J. Mag & Mag. Mat. Vol. 234, Issue 4, (2012)
[2]. Bruno Dlubak, et al. Nat. phys, 8, 557 (2012)
[3]. Y. G. Semenov, et al. Appl. Phys. Lett. 91, 153105 (2007).
[4]. Manfred Fiebig Phys. D: Appl. Phys. 38 R123 (2005)
[5]. X. He, et al. Nat. Mater. 9, 579 (2010).
[6]. N. Wu, et. al., Phys. Rev. Lett. 106, 17 (2011).