AVS 61st International Symposium & Exhibition | |
Applied Surface Science | Wednesday Sessions |
Session AS+BI+MC-WeM |
Session: | Chemical Imaging in 2D and 3D |
Presenter: | Felix Kollmer, ION-TOF GmbH, Germany |
Authors: | F. Kollmer, ION-TOF GmbH, Germany R. Möllers, ION-TOF GmbH, Germany D. Rading, ION-TOF GmbH, Germany S. Kayser, ION-TOF GmbH, Germany N. Havercroft, ION-TOF USA, Inc. E. Niehuis, ION-TOF GmbH, Germany |
Correspondent: | Click to Email |
Information on the chemical composition, physical properties and the three dimensional structure of materials and devices is of major importance. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is known to be an extremely sensitive surface imaging technique which provides elemental as well as comprehensive molecular information on all types of solid surfaces. In the so-called dual beam mode the pulsed analysis beam is combined with a low energy sputter ion beam for the removal of material. This allows depth profiling of multilayers with high depth resolution as well as three-dimensional analysis.
However, the analysis of structures at greater depth (> 10µm) requires long measurement times and the build-up of surface roughness at the crater bottom limits the achievable spatial resolution. Moreover, extremely rough samples, samples with voids, and material that exhibits strong local variations in density or sputter yield are unsuitable for conventional depth profiling. Not only that the initial surface topography is unknown but it is also modified and in many cases even roughened by the sputtering process.
In order to overcome these limitations we used a combined SIMS/FIB setup. Either a Bi cluster beam or a mono-atomic Ga beam is used to FIB mill a crater into the sample. Subsequently, a 2D TOF-SIMS image of the vertical crater wall is acquired. Since the crater wall is hardly affected by the aforementioned roughening problems this approach allows the in-depth distribution of elements to be determined by analyzing a plane perpendicular to the surface at high lateral resolution (Dl<50nm) [1].
Moreover, by serial slicing of the crater wall followed by intermediate analysis steps this approach can be extended in order to provide the full 3D characterization of the analyzed volume. We will present 2D and 3D data of reference material, multilayer samples and technically relevant real world samples such as fuel cells and battery electrodes. For thin multilayer samples the FIB process can be performed under grazing incidence in order to bevel the surface and hence magnify and accentuate thin layers in the plane of the analyzed crater wall.
However, the FIB/SIMS approach fails when analyzing organic surfaces since the molecular structure is almost completely destroyed by the sputtering process. We will discuss methods to maintain the molecular structure under high dose sputtering conditions by performing the FIB milling with massive argon clusters.
[1] F. Kollmer, W. Paul, M. Krehl, E. Niehuis, SIMS XVIII proceedings paper, Surf. Interface Anal., 2012