AVS 61st International Symposium & Exhibition | |
Applied Surface Science | Monday Sessions |
Session AS+BI+MC+SS-MoA |
Session: | The Liquid Interface & Depth Profiling and Sputtering with Cluster Ion Beams |
Presenter: | Saad Alnabulsi, Physical Electronics Inc. |
Authors: | S.S. Alnabulsi, Physical Electronics Inc. G.L. Fisher, Physical Electronics Inc. S.R. Bryan, Physical Electronics Inc. J.S. Hammond, Physical Electronics Inc. J.F. Moulder, Physical Electronics Inc. |
Correspondent: | Click to Email |
A successful sputter depth profile accurately identifies layer thickness and composition of materials as a function of depth within film structures. In the case of inorganic thin films, monoatomic argon ion beam depth profiling continues to be the preferred choice despite issues with preferential sputtering, material migration, and chemical reduction that may occur during the sputter process to alter the apparent profile of the analyzed material[1][2].
The introduction of C60 cluster ion beam and argon gas cluster ion beam (GCIB) sputtering in recent years provided the capability of successful depth profiling of polymer and organic materials while preserving the stoichiometry and chemical structure below the surface[3] [4].
Currently, there is great interest in establishing the viability of these cluster ion sources as an alternative to monoatomic argon ion beam sources for analyzing inorganic semiconductor and glass films, with anticipated improvement in the quantitative accuracy of inorganic depth profile results [5][6].
The purpose of this study is to present a comparative evaluation of quantitative XPS analysis to demonstrate the benefits and limitations of monatomic argon, C60, and argon gas cluster ion beam sputtering for compositional inorganic depth profiling.
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[4] C. M. Mahoney. Mass Spec. Rev. 29, 247 (2010).
[5] Y. Yamamoto, K. Yamamoto. Mater. Sci. Eng. 18 (2011).
[6] D. Kobayashi, Y. Yamamoto, T. Isemura. Sur. and Inter. Anal. 45 113 (2013).