AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D-ThP

Paper 2D-ThP6
XPS Depth Profiling: A Viable Alternative to Secondary Ion Mass Spectrometry

Thursday, November 13, 2014, 6:00 pm, Room Hall D

Session: 2D Materials Poster Session
Presenter: Michael Williams, Clark Atlanta University
Authors: M.D. Williams, Clark Atlanta University
B.R. Strohmeier, Thermo Fisher Scientific
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Secondary ion mass spectrometry (SIMS) is a workhorse for the depth profile characterization of epitaxial materials in the optoelectronics industry. Most notable is its parts-per-billion sensitivity and nm depth resolution for the III- V semiconductors. XPS depth profiling was used to study the effect of substrate temperature on the composition and growth rate of InGaAs/InP multiple layers grown by chemical beam epitaxy. The results are in excellent agreement with published results from SIMS analysis. We show that XPS with its characteristic sensitivity to the environment of the constituent elements in conjunction with argon ion sputtering yields depth profile information on layered systems that exceeds the utility of SIMS.