AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D-ThP

Paper 2D-ThP11
CVD Processes for the Growth of Single Layer Transition Metal Dichalcogenides and Alloys

Thursday, November 13, 2014, 6:00 pm, Room Hall D

Session: 2D Materials Poster Session
Presenter: Ariana Nguyen, University of California - Riverside
Authors: A. Nguyen, University of California - Riverside
D. Barroso, University of California - Riverside
E. Preciado, University of California - Riverside
V. Klee, University of California - Riverside
S. Bobek, University of California - Riverside
C. Lee, University of California - Riverside
S. Naghibi, University of California - Riverside
I. Lu, University of California - Riverside
G. Von Son Palacio, University of California - Riverside
T. Empante, University of California - Riverside
K. Brown, University of California - Riverside
K. Yang, University of California - Riverside
A. Nguyen, University of California - Riverside
P. Rigas, University of California - Riverside
W. Coley, University of California - Riverside
L. Bartels, University of California - Riverside
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Transition metal dichalcogenides (TMD) present an exciting material system that provides tunable and direct –bandgap semiconducting properties at the single-layer limit. While monolayer TMD materials can be fabricated through exfoliation, we demonstrate single layer films and islands of MoS2, MoSe2, WS2, etc. as well as their alloys that are grown in a CVD-like processes on SiO2 and similar materials at process temperatures of ≤700°C. The resultant films can extend in a continuous fashion across cm-scale substrates and are composed of micron-scale rotational domains. By means of alloying, their band gaps can be tuned in a continuous fashion between 1.9 and 1.6 eV. We present how the use of organic chalcogen precursors allows more versatile alloying and homogeneous growth over extended areas. We also explore variations in the growth mode as a function of process pressure.