| AVS 61st International Symposium & Exhibition | |
| 2D Materials Focus Topic | Monday Sessions |
| Session 2D+EM+NS+PS+SS+TF-MoM |
| Session: | 2D Materials Growth and Processing |
| Presenter: | Juerg Osterwalder, University of Zurich, Switzerland |
| Authors: | J. Osterwalder, University of Zurich, Switzerland S. Roth, University of Zurich, Switzerland A. Hemmi, University of Zurich, Switzerland F. Matsui, Nara Institute of Science and Technology, Japan T. Greber, University of Zurich, Switzerland |
| Correspondent: | Click to Email |
Chemical vapor deposition (CVD) performed under ultra-high vacuum conditions on single-crystal metal surfaces enables the growth of large-area and high-quality graphene and hexagonal boron nitride (h-BN) single layers. We explore the CVD parameter space of precursor pressure and temperature in order to go beyond the self-saturating single-layer growth, or to grow heterostacks of the two materials. Formed layers are characterized structurally by LEED, STM and x-ray photoelectron diffraction. On Cu(111) a graphene layer could be grown on a pre-deposited single layer of h-BN when using 3-pentanone as a precursor at a pressure of 2.2 mbar and a substrate temperature of 1100 K [1]. On Rh(111) the same procedure leads to incorporation of carbon into the metal surface layers, while a graphene layer is formed only upon a second high-pressure dose [2]. In both cases the heterostructures show clearly the stacking sequence and structural and ARPES signatures of graphene on h-BN but are far from defect-free.
[1] S. Roth et al., Nano Lett. 13, 2668 (2013).
[2] S. Roth, PhD Thesis, Department of Physics, University of Zurich (2013).