Invited Paper 2D+EM+NS+PS+SS+TF-MoM1
Exploring the Flatlands: Synthesis, Characterization and Engineering of Two-Dimensional Materials

Monday, November 10, 2014, 8:20 am, Room 310

In this talk, we report the controlled vapor phase synthesis of MoS₂ atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. More importantly, if precise two-dimensional domains of graphene, h-BN and MoS₂ atomic layers can be seamlessly stitched together, in-plane heterostructures with interesting electronic applications could potentially be created. Here, we show that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically-patterned h-BN atomic layers. Our approach can create periodic arrangements of domains with size that ranging from tens of nanometers to millimeters. The resulting graphene/h-BN atomic layers can be peeled off from their growth substrate and transferred to various platforms including flexible substrate. Finally, we demonstrate how self-assembled monolayers with a variety of end termination chemistries can be utilized to tailor the physical properties of single-crystalline MoS₂ atomic-layers. Our data suggests that combined interface-related effects of charge transfer, built-in molecular polarities, varied densities of defects, and remote interfacial phonons strongly modify the electrical and optical properties of MoS₂, illustrating an engineering approach for local and universal property modulations in two-dimensional atomic-layers.