Invited Paper 2D+EM+MS+NS-FrM8
Electronic Transport in Transition Metal Dichalcogenides

Friday, November 14, 2014, 10:40 am, Room 310

Since the discovery of graphene for electronic applications, there has been a substantial worldwide effort to explore other layered materials. Transition metal dichalcogenides (TMDs) like MoS₂, MoSe₂, or WSe₂, to just name a few, not only offer the desired ultra-thin body structure that translates into superior electrostatics as desirable for nanoelectronics applications, but also exhibit a sizable band gap. While to date the ideal application space for these materials has not been identified, it is obvious that only through a detailed understanding of the underlying transport in these layered materials intrinsic properties that lend themselves to particular applications can be uncovered.

In my presentation I will first discuss the benefits of an ultra-thin body structure for scaled tunneling FET applications including tunneling devices. Contacts play a particularly crucial role in this context and can easily mask the intrinsic performance of TMDs as will be discussed based on experimental Schottky barrier tunneling data obtained from MoS₂, MoSe₂ and WSe₂ field-effect transistors. A careful analysis of all these material systems reveals details about Schottky barrier heights for electron and hole injection as well as the band gap. These findings are then put into the context of channel length scaling and layer thickness dependence of three-terminal TMD devices based on MoS₂ transistors. Last, experimental data on the band-to-band tunneling in partially gated WSe₂ device structures will be discussed and projections about the potential usefulness of TMDs for tunneling device applications will be made.