| AVS 61st International Symposium & Exhibition | |
| 2D Materials Focus Topic | Friday Sessions |
| Session 2D+EM+MS+NS-FrM |
| Session: | 2D Materials: Device Physics and Applications |
| Presenter: | Jairo Velasco Jr., UC Berkeley |
| Authors: | J. Velasco Jr., UC Berkeley L. Ju, UC Berkeley E. Huang, Stanford University S. Kahn, UC Berkeley C. Nosiglia, UC Berkeley H.-Z. Tsai, UC Berkeley W. Yang, Beijing National Laboratory for Condensed Matter Physics, Republic of China T. Taniguchi, National Institute for Materials Science (NIMS), Japan K. Wantanabe, National Institute for Materials Science (NIMS), Japan Y. Zhang, Fudan University, Republic of China G. Zhang, Beijing National Laboratory for Condensed Matter Physics, Republic of China M.F. Crommie, UC Berkeley A. Zettl, UC Berkeley F. Wang, UC Berkeley |
| Correspondent: | Click to Email |
Van der Waals heterostructures (VDH) provide an exciting new platform for materials engineering, where a variety of layered materials with different electrical, optical and mechanical responses can be stacked together to enable new physics and novel functionalities. Here we report an emerging optoelectronic phenomenon (i.e. photo-induced modulation doping) in the graphene-boron nitride VDH (G/BN heterostructure). We find it enables flexible and repeatable writing and erasing of charge doping in graphene with visible light. We demonstrate that the photo-induced modulation doping maintains the remarkable carrier mobility of the G/BN heterostructure, and it can be used to generate spatially varying doping profiles like pn junctions. Our work contributes towards understanding light matter interactions in VDHs, and innovates a simple technique for creating inhomogeneous doping in high mobility graphene devices. This opens the door for new scientific studies and applications.