AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D+AS+HI+NS+SS-ThM

Invited Paper 2D+AS+HI+NS+SS-ThM10
Ballistic Transport in Epitaxial Graphene Nanoribbons

Thursday, November 13, 2014, 11:00 am, Room 310

Session: Nanostructures including 2D Heterostructures, Patterning of 2D Materials 
Presenter: Walt de Heer, Georgia Institute of Technology
Correspondent: Click to Email
Graphene nanoribbons are essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about 10 nanometers between scattering events, resulting in minimum sheet resistances of about 1 kW In contrast 40 nm wide graphene nanoribbons that are epitaxially grown on silicon carbide are single channel room temperature ballistic conductors on greater than 10 µm length scale, similarly to metallic carbon nanotubes. This is equivalent to sheet resistances below 1W surpassing theoretical predictions for perfect graphene by at least an order of magnitude. In neutral graphene ribbons, we show that transport is dominated by two modes. One is ballistic and temperature independent; the other is thermally activated. Transport is protected from back-scattering, possibly reflecting ground state properties of neutral graphene. At room temperature the resistance of both modes abruptly increases non-linearly with increasing length, one at a length of 16 µm and the other at 160 nm. Besides their importance for fundamental science, since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well.