| AVS 61st International Symposium & Exhibition | |
| 2D Materials Focus Topic | Monday Sessions |
| Session 2D+AS+EM+NS+SS-MoA |
| Session: | Dopants, Defects, and Interfaces in 2D Materials |
| Presenter: | Pham Viet Phuong, Sungkyunkwan University, Republic of Korea |
| Authors: | P.V. Phuong, Sungkyunkwan University, Republic of Korea K.N. Kim, Sungkyunkwan University, Republic of Korea M.H. Jeon, Sungkyunkwan University, Republic of Korea K.S. Kim, Sungkyunkwan University, Republic of Korea G. Yeom, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
We propose a novel doping method of graphene by cyclic trap-doping with low energy chlorine adsorption. Low energy chlorine adsorption for graphene chlorination avoided defect (D-band) formation during doping by maintaining the π-bonding of the graphene, which affects conductivity. In addition, by trapping chlorine dopants between the graphene layers, the proposed doping method dramatically decreased the sheet resistance by ~88% at an optimized condition. Among the reported doping methods including chemical, plasma, photochemical methods etc., the proposed doping method is believed to be the most promising for producing graphene of extremely high transmittance, low sheet resistance, high thermal stability, and high flexibility for use in various flexible electronic devices. Results of angle resolved X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron spectroscopy (HR-TEM), Raman spectroscopy, ultraviolet-Visible spectroscopy (UV-Vis) and sheet resistance, showed that this method is also non-destructive and controllable. The sheet resistance of the doped tri-layer graphene was 70 Ω/sq at 94% transmittance, which was maintained for more than 6.5 h at 230°C. Moreover, the defect intensity of graphene was not increased during the cyclic trap-doping.