AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Wednesday Sessions
       Session 2D+AS+EM+MI+MN+NS+TF-WeA

Paper 2D+AS+EM+MI+MN+NS+TF-WeA7
Effects of Dimensionality on the Raman and Photoluminescence Spectra of and TaSe2 and TaS2 Dichalcogenides

Wednesday, November 12, 2014, 4:20 pm, Room 310

Session: Properties of 2D Materials 
Presenter: Danilo Romero, University of Maryland, College Park
Authors: D. Romero, University of Maryland, College Park
M. Watson, Towson University
J.R. Simpson, Towson University
H. Berger, Ecole Polytechnique Federale de Lausanne, Switzerland
A.R. Hight Walker, NIST
Correspondent: Click to Email

We investigate the effects dimensionality on the electronic properties through the optical spectra of the transition-metal dichalcogenides 2H-TaSe2 and 1T-TaSe2, and 1T-TaS2. In bulk, these materials exhibit electronic states from Mott insulator, commensurate and incommensurate charge-density phases, and superconducting ground state as function of temperature. We explore the evolution of these properties as the materials approach a few layers, achieved via mechanical exfoliation of bulk single-crystals. Raman and photoluminescence spectroscopy of 2H-TaSe2 and 1T-TaSe2, and 1T-TaS2, carried out over a wide-range of temperature, were used as a probe of the change of the electronic properties from the bulk to single-layer phases of the materials. Comparison of the phonon and excitonic transitions as a function of temperature and dimensionality will be presented.