| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | GR+EM+NS+SS+TF-ThA1 Functionalization of MoS2 Surfaces for High-k Atomic Layer Deposition S. McDonnell, A. Azcatl, C. Buie, N. Lu, J. Kim, C.L. Hinkle, M.J. Kim, R.M. Wallace, University of Texas at Dallas |
| 2:20pm | GR+EM+NS+SS+TF-ThA2 Silicene: From Single Sheets to Multilayers G. Le Lay, A. Resta, Aix-Marseille University, France |
| 2:40pm | GR+EM+NS+SS+TF-ThA3 Invited Paper Topological Valleytronics in Monolayers of Group-VI Dichalcogenides D. Xiao, Carnegie Mellon University |
| 3:40pm | GR+EM+NS+SS+TF-ThA6 Invited Paper Controlled Scalable Synthesis of Uniform High-quality Monolayer and Fewlayer MoS2 Films L. Cao, North Carolina State University |
| 4:20pm | GR+EM+NS+SS+TF-ThA8 Invited Paper Electronic and Optical Properties of MoS2 at Monolayer Thickness T.F. Heinz, Columbia University |
| 5:00pm | GR+EM+NS+SS+TF-ThA10 Low Energy Ion Scattering Studies of the Surface Termination and Structure of Bismuth Selenide W. Zhou, X. He, Z.Y. Wang, J. Shi, J.A. Yarmoff, University of California, Riverside |
| 5:20pm | GR+EM+NS+SS+TF-ThA11 Electronic Activity of Silicene Boundaries, Edges, and Defects A.J. Mannix, B.T. Kiraly, M.C. Hersam, Northwestern University, N.P. Guisinger, Argonne National Laboratory |
| 5:40pm | GR+EM+NS+SS+TF-ThA12 A Large Scale Epitaxial Growth of h-BN and Graphene Hybrid Structures (BNCs) on 6H-SiC (0001) Controlled a Ratio of h-BN and Graphene by Annealing Temperature H.-C. Shin, S.J. Ahn, B.G. Shin, J.-R. Ahn, Sungkyunkwan University, Republic of Korea |