| AVS 60th International Symposium and Exhibition | |
| Electronic Materials and Processing | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 9:00am | EM+NS+SS+TF-FrM3 Photoluminescence and Kelvin Probe Studies of Mg-doped GaN J.D. McNamara, A.A. Baski, M.A. Reshchikov, Virginia Commonwealth University |
| 9:20am | EM+NS+SS+TF-FrM4 Surface Structure, Polarity and Surface Kinetics of InN Grown by Plasma – Assisted Atomic Layer Epitaxy: A HREELS Study A. Acharya, Georgia State University, N. Nepal, C. Eddy, Naval Research Laboratory, B. Thoms, Georgia State University |
| 9:40am | EM+NS+SS+TF-FrM5 A Vertical Superatmospheric Pressure MOCVD Reactor for InGaN Growth A.G. Melton, P. Davis, M. Uddin, E.B. Stokes, University of North Carolina at Charlotte |
| 10:00am | EM+NS+SS+TF-FrM6 Atomic Layer Epitaxy of III-N Semiconductors C.R. Eddy, Jr., U.S. Naval Research Laboratory, N. Nepal, American Association for Engineering Education, N.A. Mahadik, U.S. Naval Research Laboratory, L.O. Nyakiti, American Association for Engineering Education, S.B. Qadri, M.J. Mehl, J.K. Hite, U.S. Naval Research Laboratory |
| 10:20am | EM+NS+SS+TF-FrM7 Invited Paper Advances in Ternary Group III-Nitrides for Advanced Solid State Lighting, Photovoltaics and Thermoelectric Applications B. Kuckgok, B. Wang, M. Orocz, A.G. Melton, N. Lu, I.T. Ferguson, University of North Carolina at Charlotte |
| 11:00am | EM+NS+SS+TF-FrM9 InGaN Epilayer Growth using Migration-enhanced, Remote-Plasma MOCV R.L. Samaraweera, F. Gueth, J.K.S. Nanayakkara, M.K.I. Senevirathna, N. Dietz, Georgia State University |
| 11:20am | EM+NS+SS+TF-FrM10 The Growth and Structural Properties Analysis of Indium-rich InGaN Epilayers S. Gamage, J.K.S. Nanayakkara, M.K.I. Senevirathna, Georgia State University, A.G. Melton, I.T. Ferguson, University of North Carolina at Charlotte, N. Dietz, Georgia State University |
| 11:40am | EM+NS+SS+TF-FrM11 ALD Sidewall Passivation for Dark Current Reduction in GaN Avalanche Photodiodes J. Hennessy, L.D. Bell, S. Nikzad, Jet Propulsion Laboratory, California Institute of Technology, P. Suvarna, F. Shahedipour-Sandvik, College of Nanoscale Science and Engineering, University at Albany |