Paper TF-TuM2
Resistive Switching Devices Based on Ozone assisted ZnO Films by Atomic Layer Deposition

Tuesday, October 29, 2013, 8:20 am, Room 104 A

Atomic layer deposition (ALD) is an ideal technique to deposit ultrathin films with high conformality and precise thickness control using water as one its precursors. We demonstrate the growth temperature dependence of film thickness and surface roughness of ZnO films grown by the atomic layer deposition using ozone as oxidizer. The significantly low growth rate of film using O₃ precursor is attributed to the recombinative surface loss of O₃. The variation of the spatial uniformity inferred from the surface roughness of ZnO films and O₃ concentration were explained by a transition from reaction to recombination limited growth. We have fabricated a MOS device consisting of insulating ZnO layer using O₃ source between metallic and semiconducting Al:ZnO layers. The device demonstrated a remarkable resistive switching behavior, indicating the insulating behavior of the ZnO layer due to the electrochemical migration of oxygen vacancies at the interfaces.