AVS 60th International Symposium and Exhibition
    Thin Film Friday Sessions
       Session TF+EM+NS+SS-FrM

Paper TF+EM+NS+SS-FrM7
Manganese-based Thin Films Growth on Silicon Oxide Substrates

Friday, November 1, 2013, 10:20 am, Room 104 A

Session: Thin Film: Growth and Characterization III
Presenter: H. Sun, University of California, Riverside
Authors: H. Sun, University of California, Riverside
X. Qin, University of California, Riverside
F. Zaera, University of California, Riverside
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The growth of manganese-based films on silicon oxide substrates via the chemical vapor decomposition of two Mn metalorganic precursors, methylcyclopentadienylmanganese(I) tricarbonyl, MeCpMn(CO)3, and bis(N,N' diisopropylpentylamidinato)Mn(II), was characterized and contrasted by X-ray photoelectron spectroscopy (XPS). MeCpMn(CO)3 proved to be much less reactive than the acetamidinate, even if gas-phase activation was used to promote the growth of Mn films at lower temperatures in the first case. The acetamidinate precursor does show high reactivity, affording the deposition of Mn at reasonable rates, higher at higher temperatures, but also leads to the incorporation of approximately 15% of nitrogen and additional carbon in the grown Mn(0) films. In both depositions, a nonstoichiometric mixture of MnOx + SiOx and Mn silicate is formed first, possibly followed by the formation of a thin subsurface Mn silicide layer. Mn(0) metallic films can be grown on top of the combined Mn silicate/Mn silicide structure, which serves as an effective diffusion barrier. The Mn(0) species deposited on top of those initial layers could be oxidized by N2O or O2, during which the organic ligands could be effectively removed from the surface. As a result, manganese-based thin films growth could be achieved by repeating this deposition-oxidation process.