| AVS 60th International Symposium and Exhibition | |
| Surface Science | Tuesday Sessions |
| Session SS-TuP |
| Session: | Surface Science Poster Session |
| Presenter: | C.M. Hsu, National Taiwan University, Taiwan, Republic of China |
| Authors: | C.M. Hsu, National Taiwan University, Taiwan, Republic of China S.T. Lien, National Taiwan University, Taiwan, Republic of China Y.J. Yang, National Taiwan University, Taiwan, Republic of China J.Z. Chen, National Taiwan University, Taiwan, Republic of China I.C. Cheng, National Taiwan University, Taiwan, Republic of China C.C. Hsu, National Taiwan University, Taiwan, Republic of China |
| Correspondent: | Click to Email |
In this work, deposition of transparent and conductive ZnO thin films using an atmospheric pressure plasma jet (APPJ) is presented. The film properties, namely morphology, crystal structure, conductivity, and transmittance, are examined using SEM, XRD, 2-probe measurement, and UV-Vis spectrometer, respectively. The APPJ is sustained by a pulsed power source with a repetitive frequency up to 25 kHz using N2 or O2 as plasma gases. Zinc chloride solution is used as the precursor and is nebulized and then sprayed into the downstream of the plasma jet to deposit thin films on glass or Si wafer substrates. It is found that upon exposure of the precursor to the plasma jet, sheet-like zinc hydroxide chloride is first formed, and is then converted to zinc oxide if the jet temperature is sufficiently high. Under an optimal condition, ZnO films with the resistivity of 0.9 Ohm-cm and the average transmittance between 400 and 800 nm of 80% can be obtained. This demonstrates a one-step and fast process without the need of post-annealing steps to fabricate transparent and conductive ZnO films.