AVS 60th International Symposium and Exhibition
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP22
Silicon Rich Oxide Films Deposited with Different Flows: An Approximation of its Kinetics Growth

Tuesday, October 29, 2013, 6:00 pm, Room Hall B

Session: Surface Science Poster Session
Presenter: K. Monfil, Benemérita Universidad Autónoma de Puebla, Mexico
Authors: K. Monfil, Benemérita Universidad Autónoma de Puebla, Mexico
D. Vázquez, Benemérita Universidad Autónoma de Puebla, Mexico
G. Garcia, Benemérita Universidad Autónoma de Puebla, Mexico
J.A.L Luna, Benemérita Universidad Autónoma de Puebla, Mexico
A. Morales, Centro de Investigación en Materiales Avanzados, Mexico
J. Carrillo, Benemérita Universidad Autónoma de Puebla, Mexico
A. Benítez, Benemérita Universidad Autónoma de Puebla, Mexico
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Recently silicon rich oxides have been a material important for optical functions. Various techniques can be used as Hot-fire Chemical Vapor Deposition (HFCVD). The SiOx has shown to have a very good photoluminescence response and is also compatible with silicon technology. Therefore, in this works, SiOx Films were obtained by hot fire chemical vapor deposition (HFCVD) with different deposit conditions and an approximation of its kinetics grown was realized. To realize this approximation with experimental data, the hydrogen flows were changing of: 50, 75, 100, and 125 and 150 sccm, and the range of deposit temperature were from 800 to 1000°C. This approximation was realized with Arrhenius´s equation. The activation energies for SiOx films were determined by Arrhenius’s plot using the differences between weights before and after of the deposits. The slope of the plot describes us that our deposits have been due at the transport of the precursors. A more detailed analysis of the results is presented to confirm this.