AVS 60th International Symposium and Exhibition
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP18
Molecular Control of Doping at a Topological Insulator Surface: F4-TCNQ on Bi2Se3

Tuesday, October 29, 2013, 6:00 pm, Room Hall B

Session: Surface Science Poster Session
Presenter: J. Wang, North Carolina State University
Authors: J. Wang, North Carolina State University
A.S. Hewitt, North Carolina State University
D.B. Dougherty, North Carolina State University
Correspondent: Click to Email
The simplest 3D topological insulator is Bi2Se3, with a single almost perfectly-conical topological surface state. A challenge in the quest to characterize charge and spin transport in this unique surface state band is that samples are almost always heavily n-doped by Se vacancies when grown from the binary melt. Recently, the strong electron acceptor, F4-TCNQ has been succesfully employed to control doping in exfoliated Bi2Se3 and allowed access to surface transport properties [1]. This poster reports our characterization of F4-TCNQ film growth on Bi2Se3 by combinig Atomic Force microscopy, X-ray photoelectron spectroscopy, and angle-resolved UV photoelectron spectroscopy. We report evidence for a Stranski-Krastanov film growth mode and interfacial charge transfer effects. [1] D. Kim et al., Nat. Phys. 8, 460 (2012).