AVS 60th International Symposium and Exhibition
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP14
Improvement of PIN-Type Amorphous Silicon Thin Film Solar Cell Performance with Phosphorus Light Doping in Intrinsic Layer

Tuesday, October 29, 2013, 6:00 pm, Room Hall B

Session: Surface Science Poster Session
Presenter: W.H. Son, Kyungpook National University, Republic of Korea
Authors: W.H. Son, Kyungpook National University, Republic of Korea
S.K. Lee, Kyungpook National University, Republic of Korea
T.G. Kim, Kyungpook National University, Republic of Korea
S.H. Lee, Kyungpook National University, Republic of Korea
S.Y. Choi, Kyungpook National University, Republic of Korea
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In this paper, by investigating the effect of phosphorus light doping on an i-layer of the pin-type hydrogenated amorphous silicon (a-Si:H) solar cells, we confirmed that the incorporation of phosphorus in a-Si:H films has produced superior i-layer material for pin-type thin-films solar cells than the undoped i-layer material. The doped a-Si:H films with various phosphorus concentrations were fabricated by mixing phosphine (PH3), silane (SiH4)with hydrogen (H2) during the i-layer deposition. All films of amorphous materials were deposited by 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) method. The PH3 flow rate in the reactive gas was modified from 0 to 4.2 sccm (standard cubic centimeter per minute). The phosphorus concentration of the i-layer was measured by secondary ion mass spectroscopy (SIMS). It has been shown from the experiments that a-Si:H film doped with about 2×1018 atoms/cm3 of phosphorus shows an n--type property at a flow rate of 0.9 sccm. The optical properties of the films were measured with UV-VIS-NIR spectrophotometer in the range of 380 - 2000 nm. The various values of open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF) and conversion efficiency (Eff) were measured under 100 mW/cm2 (AM 1.5) solar simulator irradiation. Finally, by applying this process, we were able to improve the all the electrical parameters (Voc, Jsc and FF).