AVS 60th International Symposium and Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP8
Nanopatterning of Cup-stack Carbon Nanotubes using Nanostructured Al Templates

Tuesday, October 29, 2013, 6:00 pm, Room Hall B

Session: Nanometer-scale Science and Technology Poster Session
Presenter: S. Takemura, Kanto Gakuin University, Japan
Authors: Y. Watanabe, Kanto Gakuin University, Japan
R. Takeuchi, Kanto Gakuin University, Japan
H. Kato, Kanto Gakuin University, Japan
S. Takemura, Kanto Gakuin University, Japan
k. Shimada, Kanto Gakuin University, Japan
T. Hiramatsu, Kanto Gakuin University, Japan
Correspondent: Click to Email
The authors intend to develop a patterning method of cup-stack carbon nanotubes (CSCNTs) on a nanostructured Al surface and characterize the patterns by scanning probe microscopy (SPM), scanning electron microscopy (SEM), laser Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). A nanostructured line-typed Al template for patterning was fabricated by combined process of chemical treatments and anodization. CSCNTs dissolved in distilled water under the ultra sonic wave to separate the bundles of carbon nanotubes. Then droplets of this solution were dropped on the Al template or a single crystal Si wafer utilizing micropipette. Dynamic force microscopy (DFM) and SEM images of dispersed CSCNT densely deposited on a line-typed Al template and a Si wafer surface show net-work patterns on the nanostructured Al surface and the Si wafer. Highly oriented CSCNT pattern was also obtained on the line-typed Al template. CSCNT molecules were highly oriented along the line of the template. In the measurement of I-V characteristics for this sample by point contact measurements, quantum conductivities such as step-type and negative resistance were observed. The proposed method can be applied to the CNT arrangements on different surfaces such as Si and glass substrates by a nanoscale imprinting method. The nano-contact transcription was performed according to the following steps: The CSCNT patterned Al template was attached on a silicon substrate and was pressed for 30 sec. Then the Al template was removed. Using a 50 ml solution that contained CSCNT 0.02g, a networking-pattern of CSCNTs was demonstrated to be transferred to a Si wafer. In the case of 50 ml solution that contained CSCNT 0.01g, a single isolated CSCNT that was bending and twisting was obtained by DFM. In the measurement of laser Raman spectroscopy, carbon nanotube’s specific peak such as G band was observed. Radial breathing mode (RBM) was not observed because of large diameters of cup structures. In the case of SWCNT, several RBM peaks were observed between 400-100cm-1. Furthermore, the intensity of D band was higher than that of the G-band because boundaries of cup structures. Binding energy components due to CSCNT were appeared in the C 1s core level spectra for CSCNTs dropped Si wafer by XPS. A lower binding energy component at 281.5eV and higher binding energy components at 283-290eV appeared in the C 1s core level spectra of CSCNTs assigned to CSCNTs. Furthermore, the authors performed a composite patterning of dye molecules and CSCNT as the next research step. This work was aided by MEXT-supported Program for the Strategic Research Foundation at Private Universities.