AVS 60th International Symposium and Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP7
Graphene Patterns on Line-Typed Nanostructured Al Surfaces by Carbon Drawing Techniques

Tuesday, October 29, 2013, 6:00 pm, Room Hall B

Session: Nanometer-scale Science and Technology Poster Session
Presenter: K. Doi, Kanto Gakuin University, Japan
Authors: K. Doi, Kanto Gakuin University, Japan
T. Sugii, Kanto Gakuin University, Japan
Y. Takarai, Kanto Gakuin University, Japan
H. Kato, Kanto Gakuin University, Japan
Y. Watanabe, Kanto Gakuin University, Japan
S. Takemura, Kanto Gakuin University, Japan
T. Hiramatsu, Kanto Gakuin University, Japan
Correspondent: Click to Email

Recently, carbon materials are attracting researcher’s attention for the development of next-generation devices. In the present study, the authors focused on grapheme film fabrication on non-flat surfaces. In the present work, the authors selected carbon drawing rather than the other methods such as taping method because carbon drawing is applicable to fabricate grapheme film on the non-flat surface. The aim of present study is to fabricate grapheme films on chemically and electrochemically processed nanostructured Al surface by carbon drawing.

Carbon drawing is a nanofabrication method by gently pushing bulk graphite on the surface and drawing it. In the present study, the authors used HOPG for carbon drawing which was performed on a line-typed nanostructured Al substrate. The line-typed nanostructured Al template was fabricated by chemically and electrochemically processes. In the present study, carbon drawing was performed in the vertical direction to the paralleled lines on the line-typed Al template. Fabricated structures after carbon drawing were analyzed and characterized by atomic force microscopy/current imaging tunneling spectroscopy (AFM/CITS), dynamic force microscopy (DFM), optical microscopy with differential interference contrast (DIC) and laser Raman spectroscopy. The DFM image demonstrated that triangular structures of 1 μm were created along the line structure and the triangular structures with a different thickness overlapped each other. The image in the large area of this sample obtained by optical microscopy with differential interference contrast (DIC) also showed that films with a different thickness overlapped each other. In the DFM image, terrace-like structures also appeared on the aluminum surface. Some characteristics peaks in the Raman spectrum were observed for this sample. A peak at 1600cm-1 can be assigned to G band due to carbon. A peak at 1360cm-1 can be assigned to D band. A peak at 2700cm-1 can be assigned to G’ band. The current image in the AFM/CITS measurements showed that the current flows on the overall area. In point-contact measurements, current flows differently at the different points. Quantum conductivity such as step-type was observed. At the different area, wrinkles of thick films were formed on the surface in the AFM image. High conductivity was observed in the hill area whereas the valley area shows low conductivity. In the point-contact measurements, current flows on the overall area. Step-like conductivity was obtained in the I-V characteristics by point contact measurements.

This work was aided by MEXT-supported Program for the Strategic Research Foundation at Private Universities.