| AVS 60th International Symposium and Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science and Technology Poster Session |
| Presenter: | S. Takemura, Kanto Gakuin University, Japan |
| Authors: | S. Takemura, Kanto Gakuin University, Japan Y. Watanabe, Kanto Gakuin University, Japan T. Tomoya, Kanto Gakuin University, Japan H. Kato, Kanto Gakuin University, Japan T. Hiramatsu, Kanto Gakuin University, Japan |
| Correspondent: | Click to Email |
Fabrication of templates for creating nanoscale structures becomes an important subject for innovation of nanoscale devices. Authors have succeeded in fabricating unique nanostructures such as a line and crater structures on Al substrate surfaces using chemical treatments combining anodization. Polyaniline(PA) line pattern was fabricated on Si surface using these nanostructures as a template. The purpose of this study was to fabricate PA patterns on the Al template and investigate the possibility of optical devices. Nanoscopic polymerization of PA was performed nanoscopically in confined nanoscale structures fabricated on an aluminum surfaces by a chemical polymerization method. Polymerization of PA was carried out using as an oxidizing agent, ammonium peroxodisulfate (APS). Solution from 1 to 2 μl contains aniline monomer, APS and HCl dropped on the nanostructures as a droplet utilizing micropipette and extended on the surface. PA patterns were successfully fabricated by this technique. The authors also conducted transfer of PA patterns formed on the nanostructured alumina to a Si wafer by a nano-contact method. A Si substrate was attached to the PA patterned Al substrate and was pressed for several ten seconds to transfer the PA pattern to the Si substrate. Then the Al template was removed and the Si substrate was dried naturally.
Photoluminescence (PL) spectra of the line-typed nanostructured Al surface and PA patterned Al surfaces were investigated by using Horiba Jobin-Yvon Spex Fluorolog-3 fluorimeter. Ripple-patterned PL peaks were observed for the line-typed nanostructured Al surface. PA line pattern was fabricated by dropping 1 μl of PA on the line-patterned Al surface. The PL peak at 480 nm originated from the PA line overlapped the ripple pattern. For the densely deposited sample prepared by 10 μl PA solution, a PL peak at 480 nm due to PA was clearly observed. PL lifetimes were measured by time-correlated single photon counting (TCSPC). Average PL lifetimes of PA deposited line-patterned Al surface were shorter than the original Al line-pattern. I-V characteristics of PA on the nanostructured Al surface and PA pattern-transferred Si wafer were obtained. Step-like curves were obtained in the PA pattern that the dots were linearly oriented. Negative resistance was observed in the PA pattern-transferred Si wafer.
This work was aided by MEXT-supported Program for the Strategic Research Foundation at Private Universities.