| AVS 60th International Symposium and Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science and Technology Poster Session |
| Presenter: | M.A. Melendez-Lira, Cinvestav-IPN, Mexico |
| Authors: | M.A. Melendez-Lira, Cinvestav-IPN, Mexico E. Mota-Pineda, ESIME-IPN, Mexico |
| Correspondent: | Click to Email |
Silicon nanocrystals (Si-NC) embedded within a SiO2 matrix deposited on p type Si(111) substrates have been successfully produced through a reactive RF sputtering technique employing the ratio of oxygen to argon as parameter to modulate the Si-NC size distribution [1] . The Si-NC shown photoluminescence emission with characteristics dependent on its size. Characterization of the transversal I vs V response present a rectifying-like behavior. The spectral photoresponse curves shown a maximum around 1100 nm with a FWMH dependent on the Si-NC size distribution. The intensity of the spectral photoresponse shown a dependence on the electrical polarization applied on the contacts. The zero of the I vs V curves does not change with the illumination of the sample indicating the absence of a photovoltaic driving force. Results are analyzed taking in account the size and distribution of Si-NC in the SiO2 matrix.
[1]. E. Mota-Pineda et al. Journal of Applied Physics 108, 094323(2010)
*: The partial financial support of ICyT-DF and CONACyT-Mex is acknowledged