AVS 60th International Symposium and Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP3
Embedded SiGe Alloy Nanoparticles formed by Co-sputtering of Si, Ge

Tuesday, October 29, 2013, 6:00 pm, Room Hall B

Session: Nanometer-scale Science and Technology Poster Session
Presenter: M. Meléndez-Lira, CINVESTAV-IPN, Mexico
Authors: A. Hernández-Hernández, CINVESTAV-IPN, Mexico
L.A. Hernández-Hernández, ESFM-IPN, Mexico
F. De Moure-Flores, UAQ, Mexico
J.G. Quiñones-Galván, ININ, Mexico
M. Meléndez-Lira, CINVESTAV-IPN, Mexico
Correspondent: Click to Email
Using magnetron co-sputtering of Ge and Si targets, Si:Ge films were fabricated for exploring the influence of SiO2 roughness on formation, structure, and phonon properties of nanocrystalline Si1−xGex (nc-Si1−xGex). Structural characterization was carried out by grazing angle X-ray diffraction and atomic force microscopy. The electronic properties were studied by room temperature photoluminescence and Raman spectroscopies. Surface roughness was quantified by atomic force microscopy. X-ray diffraction show diffraction peaks due to SiGe alloy nanoparticles and no peaks due to elemental Si or Ge. The nanoparticle size estimated from XRD is around 7.5~12 nm. Raman spectroscopy was revealed that each optical vibration mode (Ge–Ge, Ge–Si, or Si–Si mode) is of evident phonon confinement effect. Photoluminescence emission in visible range it is associated to the quantum confinement. The roughness of the as-deposited amorphous SiO2 films is an essential factor in determining the crystallization behavior and in controlling NCs size.

*: partially funded by CONACyT-Mexico