AVS 60th International Symposium and Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP2
Gallium Oxide and Gallium Nitride Nanoparticle Synthesis using Non-Thermal Plasma with O2 and N2 Gases

Tuesday, October 29, 2013, 6:00 pm, Room Hall B

Session: Nanometer-scale Science and Technology Poster Session
Presenter: J.H. Kim, Korea Research Institute of Standards and Science, Republic of Korea
Authors: J.H. Kim, Korea Research Institute of Standards and Science, Republic of Korea
K.H. You, Korea Advanced Institute of Science and Technology, Republic of Korea
S.J. You, Korea Research Institute of Standards and Science, Republic of Korea
J.I. Lee, Korea Research Institute of Standards and Science, Republic of Korea
D.J. Seong, Korea Research Institute of Standards and Science, Republic of Korea
Y.H. Shin, Korea Research Institute of Standards and Science, Republic of Korea
Correspondent: Click to Email
Compounds of Ga, such as gallium oxide(Ga2O3) and gallium nitride(GaN), are of interest due to its various properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes(LEDs) and laser diodes(LDs). The Ga2O3 is a promising material for high temperature stable gas sensing, catalytic and optoelectronic device applications[1,2]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents.

In this report, we develop a synthesizing method for the gallium oxide and gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is evaporated by induction heating Nitrogen and oxygen source for nanoparticle synthesis are supplied from inductively coupled plasma with N2 and O2 gas. The synthesized nanoparticles are analyzed using field-emission scanning microscope(FESEM), transmission electron microscope(TEM) and x-ray photoelectron spectroscopy(XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

References

1. L. Li, E. Auer, M. Liao, X. Fang, T. Zhai,U. K. Gautam, A. Lugstein, Y. Koide, Y. Bando and D. Golberg, Nanoscale, 3, 1120, 2011.

2. H. Yang, R. Shi, J. Yu, R. Liu, R. Zhang, H. Zhao, L. Zhang and H. Zheng, J. Phys. Chern. C 113 (52), 21548, 2009 .