AVS 60th International Symposium and Exhibition
    Nanometer-scale Science and Technology Monday Sessions
       Session NS+AS+EM-MoA

Paper NS+AS+EM-MoA11
Vapor Transport Growth and Thermal Conductivity Measurement of Chalcogenide Nanowires with Axial Heterojunctions

Monday, October 28, 2013, 5:20 pm, Room 203 B

Session: Nanowires and Nanotubes
Presenter: C.J. Hawley, Drexel University
Authors: C.J. Hawley, Drexel University
J.E. Spanier, Drexel University
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We report on the controlled vapor transport growth of bismuth chalcogenide nanowires by the vapor-liquid-solid (VLS) mechanism, both in the form of ternary alloys as well as axial variation of the binary compounds bismuth telluride and bismuth selenide. The nanowires exhibiting axial heterojunctions are of specific interest as they promise to reduce a device's effective thermal conductivity through the incorporation of boundary impendences at each junction. These nanowires are measured by suspending a single nanowire between contacts and joule heating the nanowires in a four-probe configuration. The change in resistivity due to the joule heating, in combination with numerical modeling of the axially varying nanowire system, allows for the calculation of the effective thermal conductivity of the nanowires, useful for their exploration as a more efficient low temperature thermoelectric nanostructured material.

Work was supported by the U.S. Army Research Office (W911NF-08-1-0067) and C.J.H. was supported by the GAANN-RETAIN program supported by the U. S. Dept. of Education (P200A100117).