| AVS 60th International Symposium and Exhibition | |
| Manufacturing Science and Technology | Tuesday Sessions |
| Session MS+AS+EL+EM+PS+TF-TuA |
| Session: | Manufacturing Challenges of Nanoscale Patterning |
| Presenter: | C. Henderson, Georgia Institute of Technology |
| Authors: | C. Henderson, Georgia Institute of Technology A. Peters, Georgia Institute of Technology R. Lawson, Georgia Institute of Technology P. Ludovice, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Future scaling of integrated circuits (IC) is in jeopardy due to a number of challenges related to both future material and process requirements that are needed to allow for fabrication of sub-20 nm IC devices. One of the most critical challenges is that of developing patterning technologies that can allow for formation of sub-20 nm patterned structures in a fast and economically viable manner. Due to difficulties with alternative technologies, techniques that can extend the use of current 193 nm optical lithography in a cost effective manner would be very attractive. Directed Self-Assembly (DSA) using block copolymers to perform pitch subdivision of lithographically generated primary patterns is one such promising technology. In this technique, a lithographic method is first used to define a topographic or chemical template pattern on a surface. This surface is then coated with a block copolymer that is further processes to induce microphase separation. The presence of the topographic or chemical patterns on the surface aligns, registers, and provides long range order to the formed block copolymer patterns. This microphase separation-based patterning process utilizes the propensity of the block copolymer to naturally form nanometer scale patterns whose size are dictated by the polymer block molecular weight.
The overarching goal of our work has been to develop both new block copolymers that can enable sub-20nm DSA patterning and to develop the experimental and modeling tools needed to understand the limits of such processes. In this paper, we will review our recent systematic studies of block copolymer DSA processes using state-of-the-art molecular dynamics simulations. The aim of these studies has been to identify the important material and process factors that affect the DSA process and to quantify the sensitivity of the DSA process to these factors. For example, the influence of polymer block molecular weight control and polydispersity on patterning have been rigorously quantified. Furthermore, processing factors such as guiding pattern mis-sizing and low level surface topography in the guiding pattern and their effect on DSA patterning have been studied in detail. Studies have also been performed via simulation using thermodynamic integration methods to calculate the free energy of defects in such DSA systems and the sensitivity of such defect free energies to important material and process parameters. We will review the outcomes of these studies to illustrate what the important material and process challenges will be in adapting block copolymer DSA methods into a manufacturable technology.