AVS 60th International Symposium and Exhibition
    Magnetic Interfaces and Nanostructures Monday Sessions
       Session MI-MoM

Paper MI-MoM10
Skyrmionic MnSi Nanowires on Si: SiO2 Layer as a Catalyst Assistant for the CVD Growth

Monday, October 28, 2013, 11:20 am, Room 202 A

Session: Topological Materials, Rashba Systems, and Heusler Alloys
Presenter: S.W. Tang, University of Tennessee
Authors: S.W. Tang, University of Tennessee
I. Kravchenko, Oak Ridge National Laboratory
J.Y. Yi, University of Tennessee
G.X. Cao, University of Tennessee
J. Howe, Oak Ridge National Laboratory
D.G. Mandrus, University of Tennessee
Z. Gai, Oak Ridge National Laboratory
Correspondent: Click to Email

Magnetic skyrmion, a vortex-like spin-swirling object recently observed in chiral-lattice magnets, are of great interest to future spin-electronic related data storage and other information technology applications. We report that single crystal helimagnetic MnSi nanowires could be synthesized in large amounts via SiO2 thin film assisted chemical vapor deposition comparing to previous reports, SiO2 plays an important role in controlling amount of diffusing Si to achieve relative low supersaturation ratio. Growth process is controlled so as to find the optimized parameters. Based on that, a temperature-time-distance growth phase diagram is plotted. The ac and DC magnetic properties of MnSi nanowires reveal the persistent of the helimagnetic and skyrmion magnetic ordering in the one-dimensional wires. Devices are fabricated via photolithography and e-beam lithography. Transport properties of this single wire device are measured.