AVS 60th International Symposium and Exhibition
    Magnetic Interfaces and Nanostructures Tuesday Sessions
       Session MI+AS+NS+SP-TuA

Invited Paper MI+AS+NS+SP-TuA7
Probing Magnetic Interfaces and Nanostructures with Hard X-ray and Standing-Wave Excited Photoemission Spectroscopy

Tuesday, October 29, 2013, 4:00 pm, Room 202 A

Session: Advanced Probes in Magnetic Imaging and Characterization
Presenter: A.X. Gray, SLAC National Accelerator Laboratory
Authors: A.X. Gray, SLAC National Accelerator Laboratory
J. Minar, Ludwig Maximillian University, Germany
S. Ueda, National Institute for Materials Science, Japan
L. Plucinski, Forschungszentrum Jülich GmbH, Germany
A. Bostwick, Advanced Light Source
E. Rotenberg, Advanced Light Source
C.M. Schneider, Forschungszentrum Jülich GmbH, Germany
H. Ebert, Ludwig Maximillian University, Germany
K. Kobayashi, National Institute for Materials Science, Japan
C.S. Fadley, University of California, Davis
Correspondent: Click to Email
The ever-growing demand for miniaturization and increased speeds of next-generation electronic devices has taken science to the quantum frontier in which emergent phenomena at the nanoscale require a clear differentiation between surface, bulk and interface properties. Thus, for many technologically-promising novel materials electronic structure varies dramatically as a function of depth and proximity to other materials. Therefore, novel depth-resolved characterization techniques are required to disentangle these rich electronic behaviors, including magnetism and spin. In this talk I will describe several new directions in the field of x-ray photoelectron spectroscopy, made possible with the advent of third-generation synchrotron light sources and recent advances in the fields of x-ray optics and photoelectron detection. I will present several case-studies wherein hard x-ray photoelectron spectroscopy (HAXPES) in the multi-keV regime is used to probe the bulk properties of complex thin-film materials and heterojunctions, which would be otherwise impossible to investigate using conventional soft x-ray XPS. I will present the first results of hard x-ray angle-resolved photoemission measurements (HARPES), at excitation energies of 3 and 6 keV. Compared to the traditional ARPES, carried out in the UPS regime (20-100 eV), this new technique enables one to probe on average 10-40 times deeper into the bulk. Finally, I will introduce a new photoemission technique (SWARPES) which combines soft x-ray ARPES with standing-wave (SW) excited photoelectron spectroscopy, wherein the intensity profile of the exciting x-ray radiation is tailored within the sample in order to provide a depth-selective probe of the electronic structure of buried layers and interfaces.