| AVS 60th International Symposium and Exhibition | |
| Graphene and Other 2D Materials Focus Topic | Monday Sessions |
| Session GR+EM+NS+SP+TF-MoA |
| Session: | Electronic Properties and Charge Transport in 2D Materials |
| Presenter: | K. McAllister, Clark Atlanta University |
| Authors: | K. McAllister, Clark Atlanta University H.B.M. Shashikala, Clark Atlanta University S.D. Sherpa, Georgia Institute of Technology M.D. Williams, Clark Atlanta University |
| Correspondent: | Click to Email |
Ultraviolet photoemission spectroscopy measurements of fluorinated epitaxial graphene on the carbon face of silicon carbide show that there are changes in the electron density of states in the valence band near the Fermi level with applied electrical bias. The strong modification of density of states may be due to doping or piezoelectric effects. The experimentally observed changes in the electronic structure are compared to analysis using first principles density-functional theory including interlayer Van der Waals interactions. The results indicate that the p-doping inherent with the fluorination strongly effects the changes in the electronic band structure near the valence band maximum of the joint density of states region.